We demonstrate optically excited lasing by an organic semiconducting thin-film based on 2,7-bis[4-(N-carbazole)phenylvinyl]-9,9′- spirobifluorene (spiro-SBCz) as an active gain medium with a first-order distributed feedback (DFB) reflector. We prepared DFB reflectors with periods from 132.5 to 145.00nm and grooves from 70 to 140nm depth by using electron-beam-lithography and plasma-etching techniques. The laser having a reflector with a 145.0nm period had a lasing threshold of 0.72±0.07 μJ=cm2, 83% lower than its threshold of amplified spontaneous emission (4.1±0.4 μJ=cm2).
!!!All Science Journal Classification (ASJC) codes
- 化学 (全般)