Low threshold field emission from high-quality cubic boron nitride films

Kungen Teii, Seiichiro Matsumoto

研究成果: ジャーナルへの寄稿記事

14 引用 (Scopus)

抄録

Field emission performance of materials with mixed sp 2/sp 3 phases often depends upon the phase composition at the surface. In this study, the emission performance of high-quality cubic boron nitride (cBN) films is studied in terms of phase purity. Thick cBN films consisting of micron-sized grains are prepared from boron trifluoride gas by chemical vapor deposition in a plasma jet and an inductively coupled plasma. Both the bulk and surface phase purities as well as crystallinities of cBN evaluated by visible and ultraviolet Raman spectroscopy, glancing-angle x-ray diffraction, and x-ray photoelectron spectroscopy are the highest when the film is deposited in a plasma jet under an optimized condition. The emission turn-on field decreases with increasing the phase purity, down to around 5 V/μm for the highest cBN purity, due to the larger field enhancement, while it is higher than 14 V/μm without cBN (sp 2-bonded hexagonal BN only). The results indicate that the total field enhancement for the high phase purity film is governed by the internal field amplification related to the surface coverage of more conductive cBN, rather than the external one related to the surface topology or roughness.

元の言語英語
記事番号093728
ジャーナルJournal of Applied Physics
111
発行部数9
DOI
出版物ステータス出版済み - 5 1 2012

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boron nitrides
field emission
purity
thresholds
plasma jets
boron fluorides
augmentation
ultraviolet spectroscopy
x ray spectroscopy
crystallinity
x ray diffraction
roughness
topology
Raman spectroscopy
photoelectron spectroscopy
vapor deposition
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Low threshold field emission from high-quality cubic boron nitride films. / Teii, Kungen; Matsumoto, Seiichiro.

:: Journal of Applied Physics, 巻 111, 番号 9, 093728, 01.05.2012.

研究成果: ジャーナルへの寄稿記事

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