Lower pressure limit of diamond growth in inductively coupled plasma

Kungen Teii, Toyonobu Yoshida

研究成果: ジャーナルへの寄稿学術誌査読

40 被引用数 (Scopus)

抄録

A study of diamond growth at pressures below 20 mTorr by using an inductively coupled radio frequency plasma is presented. Emissive and Langmuir probes, and optical emission spectroscopy were used to examine the plasma, and deposits were obtained on single crystalline silicon and diamond substrates with controlling the bombarding ion energy by the sheath potential (Vsheath). A higher threshold of Vsheath that allowed diamond growth was found in the range of 11-19 V above 20 mTorr, while a shift down of the Vsheath threshold was observed below 10 mTorr, as confirmed by Raman spectroscopy and electron diffraction. The growth at 10 mTorr was successful only when Vsheath was reduced to 2 V, however, the growth at 5 mTorr was no longer possible even when V sheath was reduced to 2 V. Effects of the pressure decrease on the suppression of diamond growth below 10 mTorr were interpreted in terms of an increase in ion flux relative to radical flux as well as low radical density corresponding to the plasma density of approximately 2×1010cm-3.

本文言語英語
ページ(範囲)1864-1870
ページ数7
ジャーナルJournal of Applied Physics
85
3
DOI
出版ステータス出版済み - 2月 1999
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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