Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

本文言語英語
ホスト出版物のタイトルLaser-Based Micro- and Nanoprocessing XIII
編集者Udo Klotzbach, Akira Watanabe, Rainer Kling
出版社SPIE
ISBN(電子版)9781510624542
DOI
出版ステータス出版済み - 2019
イベントLaser-Based Micro- and Nanoprocessing XIII 2019 - San Francisco, 米国
継続期間: 2 5 20192 7 2019

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10906
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

会議

会議Laser-Based Micro- and Nanoprocessing XIII 2019
Country米国
CitySan Francisco
Period2/5/192/7/19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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