Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

元の言語英語
ホスト出版物のタイトルLaser-Based Micro- and Nanoprocessing XIII
編集者Udo Klotzbach, Akira Watanabe, Rainer Kling
出版者SPIE
ISBN(電子版)9781510624542
DOI
出版物ステータス出版済み - 1 1 2019
イベントLaser-Based Micro- and Nanoprocessing XIII 2019 - San Francisco, 米国
継続期間: 2 5 20192 7 2019

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10906
ISSN(印刷物)0277-786X
ISSN(電子版)1996-756X

会議

会議Laser-Based Micro- and Nanoprocessing XIII 2019
米国
San Francisco
期間2/5/192/7/19

Fingerprint

Thin-film Transistor
Excimer Laser
Excimer lasers
Thin film transistors
Polysilicon
excimer lasers
Fabrication
transistors
Doping (additives)
Laser
fabrication
Lasers
phosphoric acid
Electrical Properties
Phosphoric acid
Resistivity
Laser beam effects
thin films
carrier mobility
Irradiation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T., & Ikenoue, H. (2019). Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. : U. Klotzbach, A. Watanabe, & R. Kling (版), Laser-Based Micro- and Nanoprocessing XIII [109060J] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 10906). SPIE. https://doi.org/10.1117/12.2509141

Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. / Imokawa, Kaname; Tanaka, Nozomu; Suwa, Akira; Nakamura, Daisuke; Sadoh, Taizoh; Goto, Tetsuya; Ikenoue, Hiroshi.

Laser-Based Micro- and Nanoprocessing XIII. 版 / Udo Klotzbach; Akira Watanabe; Rainer Kling. SPIE, 2019. 109060J (Proceedings of SPIE - The International Society for Optical Engineering; 巻 10906).

研究成果: 著書/レポートタイプへの貢献会議での発言

Imokawa, K, Tanaka, N, Suwa, A, Nakamura, D, Sadoh, T, Goto, T & Ikenoue, H 2019, Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. : U Klotzbach, A Watanabe & R Kling (版), Laser-Based Micro- and Nanoprocessing XIII., 109060J, Proceedings of SPIE - The International Society for Optical Engineering, 巻. 10906, SPIE, Laser-Based Micro- and Nanoprocessing XIII 2019, San Francisco, 米国, 2/5/19. https://doi.org/10.1117/12.2509141
Imokawa K, Tanaka N, Suwa A, Nakamura D, Sadoh T, Goto T その他. Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. : Klotzbach U, Watanabe A, Kling R, 編集者, Laser-Based Micro- and Nanoprocessing XIII. SPIE. 2019. 109060J. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2509141
Imokawa, Kaname ; Tanaka, Nozomu ; Suwa, Akira ; Nakamura, Daisuke ; Sadoh, Taizoh ; Goto, Tetsuya ; Ikenoue, Hiroshi. / Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. Laser-Based Micro- and Nanoprocessing XIII. 編集者 / Udo Klotzbach ; Akira Watanabe ; Rainer Kling. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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