Lowering of the Substrate Bias Voltage for Deposition of Cubic Boron Nitride in Microwave Plasma

T. Nakakuma, Kungen Tsutsui, S. Matsumoto

研究成果: ジャーナルへの寄稿記事

抄録

A moderate-pressure microwave plasma is used to deposit boron nitride (BN) films by employing boron trifluoride as a source gas. In the deposition conditions, the ion flux onto a negatively biased substrate is measured to be on the order of 10 16 cm -2 s -1 depending upon the bias voltage. The films consisting of both hexagonal BN and cubic BN (cBN) phases are deposited on silicon substrates by applying a bias voltage ranging from-85 to-200 V. The film deposited at-85 V shows the higher crystallinity and larger roughness and grains of cBN due to a decrease in mean ion impact energy. The results suggest that the bias voltage for cBN phase formation is lowered by increasing the ion to depositing boron flux ratio even in collisional moderate-pressure conditions.

元の言語英語
記事番号8497032
ページ(範囲)1205-1209
ページ数5
ジャーナルIEEE Transactions on Plasma Science
47
発行部数2
DOI
出版物ステータス出版済み - 2 1 2019

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boron nitrides
microwaves
electric potential
boron fluorides
ion impact
crystallinity
ions
boron
roughness
deposits
silicon
gases
energy

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

これを引用

Lowering of the Substrate Bias Voltage for Deposition of Cubic Boron Nitride in Microwave Plasma. / Nakakuma, T.; Tsutsui, Kungen; Matsumoto, S.

:: IEEE Transactions on Plasma Science, 巻 47, 番号 2, 8497032, 01.02.2019, p. 1205-1209.

研究成果: ジャーナルへの寄稿記事

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