Lowering of the Substrate Bias Voltage for Deposition of Cubic Boron Nitride in Microwave Plasma

T. Nakakuma, K. Teii, S. Matsumoto

研究成果: Contribution to journalArticle査読

抄録

A moderate-pressure microwave plasma is used to deposit boron nitride (BN) films by employing boron trifluoride as a source gas. In the deposition conditions, the ion flux onto a negatively biased substrate is measured to be on the order of 10 16 cm -2 s -1 depending upon the bias voltage. The films consisting of both hexagonal BN and cubic BN (cBN) phases are deposited on silicon substrates by applying a bias voltage ranging from-85 to-200 V. The film deposited at-85 V shows the higher crystallinity and larger roughness and grains of cBN due to a decrease in mean ion impact energy. The results suggest that the bias voltage for cBN phase formation is lowered by increasing the ion to depositing boron flux ratio even in collisional moderate-pressure conditions.

本文言語英語
論文番号8497032
ページ(範囲)1205-1209
ページ数5
ジャーナルIEEE Transactions on Plasma Science
47
2
DOI
出版ステータス出版済み - 2 2019

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 凝縮系物理学

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