LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System

Tetsuya Goto, Kaori Saito, Fuminobu Imaizumi, Makoto Hatanaka, Masami Takimoto, Michinobu Mizumura, Jun Gotoh, Hiroshi Ikenoue, Shigetoshi Sugawa

研究成果: ジャーナルへの寄稿学術誌査読

23 被引用数 (Scopus)

抄録

Selective laser annealing system was developed to realize fabrications of low-temperature poly-Si thin-film transistors (TFTs) even for large substrate, while the conventional excimer laser annealing system has the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this paper, this new system was applied to fabricate poly-Si TFTs, using two laser exposure methods such as the static exposure and the scan exposure. Grain size increased as the laser energy density increased, and TFTs with the field-effect mobility larger than 100 cm2V-1s-1 with the ON- OFF ratio of drain current of approximately 106 could be obtained. Furthermore, for the scan exposure, periodic grain structure was observed resulting from the lateral solidification. In this condition, variations of electrical properties of TFT could be reduced compared to the case of the static exposure.

本文言語英語
論文番号8395300
ページ(範囲)3250-3256
ページ数7
ジャーナルIEEE Transactions on Electron Devices
65
8
DOI
出版ステータス出版済み - 8月 2018

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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