Magnetic wire memory is attractive for future ultra-low power consumption data storage. To prepare the magnetic wire, most of the research group are using a dry etching or lift-off method. However, the process makes several damages to the sample. Therefore, we have proposed a new fabrication technique of the magnetic wire without the etching process. It can be realize by using nano-imprint method on a plastic substrate. The wire edge is very smooth compared with that of the magnetic wire made by lift-off method. Therefore, the critical current density for domain wall motion of the nano-imprinted magnetic wire can be reduced down to one-tenth compared with that made by lift-off method. And also, using this method, very narrow TbFeCo magnetic wire of 45nm in width can be fabricated and uniform magnetic domain patterns are recorded on it.