Maskless Mn implantation in GaAs using focused Mn ion beam

M. Itou, M. Kasai, T. Kimura, J. Yanagisawa, F. Wakaya, Y. Yuba, K. Gamo

研究成果: Contribution to journalConference article査読

2 被引用数 (Scopus)


Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.

ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
出版ステータス出版済み - 5 2003
イベント13th International conference on Ion beam modification of Mate - Kobe, 日本
継続期間: 9 1 20029 6 2002

All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 器械工学


「Maskless Mn implantation in GaAs using focused Mn ion beam」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。