Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版ステータス||出版済み - 5 2003|
|イベント||13th International conference on Ion beam modification of Mate - Kobe, 日本|
継続期間: 9 1 2002 → 9 6 2002
All Science Journal Classification (ASJC) codes