Mass flow and reaction analysis of the growth of GaN by HVPE

P. Kempisty, I. Grzegory, M. Boćkowski, S. Krukowski, B. Łucznik, B. Pastuszka, S. Porowski

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

HVPE growth in horizontal flow reactor has been analysed using finite element calculations and molecular estimates of the reaction rates. Finite element code FIDAP (commercially available from Fluent Inc.) has been used to calculate the flow pattern in the reactor. In the first approximation it was assumed that the flow pattern is weekly dependent on the temperature distribution in the reactor. It was also assumed that the volume reaction rates can be approximated by temperature independent reaction constants. The HCl + Ga(1) reaction rate has been estimated using ideal gas approximation for HCl vapour. The degree of HCl to GaCl conversion was obtained in function of the pressure, flow velocity and geometry of the reactor. The conversion dependence on the sticking coefficient of HCl on liquid Ga surface was analysed. It is shown that for the typical design of the reactor, high conversion rates were observed, even for the sticking coefficient as low as 0.001.

本文言語英語
ページ(範囲)131-134
ページ数4
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
203
1
DOI
出版ステータス出版済み - 1 1 2006
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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