Here we describe our recent results as to nanoscale resistive switching phenomena by utilizing single-crystalline metal oxide nanowires. The nanowires are grown via vapor-liquid-solid method. A single nanowire device was fabricated by integrating with top-down lithography techniques. It was found that the use of planer-type nanowire ReRAM devices allows us to examine not only the intrinsic nanoscale resistive switching properties, which have been buried in conventional capacitor devices, but also for designing nanoscale resistive memory devices.
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