Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor

Hideya Kumomi, Seiichiro Yaginuma, Hideyuki Omura, Amita Goyal, Ayumu Sato, Masaya Watanabe, Mikio Shimada, Nobuyuki Kaji, Kenji Takahashi, Masato Ofuji, Tomohiro Watanabe, Naho Itagaki, Hisae Shimizu, Katsumi Abe, Yoshinori Tateishi, Hisato Yabuta, Tatsuya Iwasaki, Ryo Hayashi, Toshiaki Aiba, Masafumi Sano

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This paper presents the following recent investigations of transparent amorphous-oxide semiconductors (TAOS) from materials to devices and circuits. 1) Composition of metals in TAOS are widely explored with the aim of seeking semiconductors suitable for the channel layers of thin-film transistors (TFTs) composing backplanes for flat-panel displays. It is found in combinatorial approaches to the materials exploration that indium-based ternary TAOS (In-X-O) and their TFTs show the properties and the performance as good as those of the most popular material of amorphous In-Ga-Zn-O (α-IGZO) when X = Zn or Ge. 2) Defects and impurities in TAOS are investigated by theoretical approaches. The first-principle calculation of the electron states reveals that charge-neutral oxygen vacancy or interstitial forms the density of states around mid-gap level and does not generate carriers directly, while hydrogen impurity raises the Fermi level beyond the conduction-band minimum and acts as a donor in TAOS. 3) Device structures of TAOS-TFTs are also investigated extensively for better performance and stability. It is found in channel-etch type TFTs with bottom-gate inverse-stagger structures that the TFT characteristics and stability are significantly improved by chemically removing the back-channel layer in a wet-etching process. Coplanar homojunction (CH) structure is proposed as a novel device structure where conductive -IGZO regions work as the source and drain electrodes to the channel region of semiconductor α-IGZO. The CH TFTs show excellent characteristics and stability, with low series resistance without any difficulty in making good electrical contact between metals and TAOS. 4) Circuits using TAOS-TFTs are demonstrated. A ring oscillator composed of fifteen-stage inverters with a buffer circuit operates as designed by circuit simulation with a TFT model for hydrogenated amorphous Si TFTs. Pixel circuits composed of three TFTs and one transparent capacitor successfully drive organic light-emission diode cells without a planarization layer on a 2-in diagonal panel having 176 × 144 × 3 pixels.

元の言語英語
ページ(範囲)531-540
ページ数10
ジャーナルIEEE/OSA Journal of Display Technology
5
発行部数12
DOI
出版物ステータス出版済み - 12 2009
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Kumomi, H., Yaginuma, S., Omura, H., Goyal, A., Sato, A., Watanabe, M., Shimada, M., Kaji, N., Takahashi, K., Ofuji, M., Watanabe, T., Itagaki, N., Shimizu, H., Abe, K., Tateishi, Y., Yabuta, H., Iwasaki, T., Hayashi, R., Aiba, T., & Sano, M. (2009). Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor. IEEE/OSA Journal of Display Technology, 5(12), 531-540. https://doi.org/10.1109/JDT.2009.2025521