Measurement of Output Signals from an Avalanche Photodiode by Irradiating with X-rays in the Temperature Range from 150mK to 4.2K

Takashi Yasumune, Takuro Masuda, Yuki Oshima, Keisuke Maehata, Kenji Ishibashi, Takahiro Umeno

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

We measured leakage current and gain characteristics of a reverse-type avalanche photodiode (APD). The leakage current generated below the breakdown voltage was found to be lower than 1 pA at temperatures below 200 K. Avalanche multiplication of the APD was achieved in the temperature range from 150mK to 300 K. To characterize charge carrier properties of the APD, output signal pulses from the APD were observed by irradiating the APD with X-rays in the temperature range from 150mK to 4.2 K. The yield of signal charge was found to abruptly change in the temperature range from 1 to 2 K, where the yield of charge at 1 K is about 50% of that at 2 K.

本文言語英語
論文番号072201
ジャーナルJapanese journal of applied physics
50
7 PART 1
DOI
出版ステータス出版済み - 7月 1 2011

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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