Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF

Junya Kuroda, Seiya Manabe, Yukinobu Watanabe, Kojiro Ito, Wang Liao, Masanori Hashimoto, Shin Ichiro Abe, Masahide Harada, Kenichi Oikawa, Yasuhiro Miyake

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.

本文言語英語
論文番号9024135
ページ(範囲)1599-1605
ページ数7
ジャーナルIEEE Transactions on Nuclear Science
67
7
DOI
出版ステータス出版済み - 7月 2020

!!!All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学

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