A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.
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