Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method

研究成果: ジャーナルへの寄稿記事

抄録

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

元の言語英語
記事番号090208
ジャーナルJapanese Journal of Applied Physics
49
発行部数9 PART 1
DOI
出版物ステータス出版済み - 9 2010

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Electron diffraction
finite element method
electron diffraction
membranes
Membranes
Finite element method
Strain relaxation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

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title = "Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method",
abstract = "Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1{\%} at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.",
author = "Hongye Gao and Ikeda, {Ken Ichi} and Satoshi Hata and Hideharu Nakashima and Dong Wang and Hiroshi Nakashima",
year = "2010",
month = "9",
doi = "10.1143/JJAP.49.090208",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "9 PART 1",

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T1 - Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method

AU - Gao, Hongye

AU - Ikeda, Ken Ichi

AU - Hata, Satoshi

AU - Nakashima, Hideharu

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2010/9

Y1 - 2010/9

N2 - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

AB - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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