Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method

Hongye Gao, Ken Ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, Hiroshi Nakashima

研究成果: Contribution to journalArticle査読

抄録

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

本文言語英語
論文番号090208
ジャーナルJapanese journal of applied physics
49
9 PART 1
DOI
出版ステータス出版済み - 9 2010

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Measurement of strain in freestanding Si/Si<sub>x</sub>N<sub>y</sub> membrane by convergent beam electron diffraction and finite element method」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル