Mechanical damage gettering effect in Si

Renshi Sawada, Toshiroh Karaki, Junji Watanabe

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

抄録

The gettering effectiveness of microdefects in Si wafer with mechanical damage introduced deliberately is investigated in relation to the degree of damage and the stress field around the damage. It is found that gettering action continues for 8 hours or more, although slower, when the damage is applied to a deep part of the wafer. This is due to the fact that the dislocations introduced deep in the wafer continue to serve as sinks for microdefect nuclei. The gettering effect is also greatly dependent on the microdefect density of a wafer.

元の言語英語
ページ(範囲)2097-2104
ページ数8
ジャーナルJapanese Journal of Applied Physics
20
発行部数11
DOI
出版物ステータス出版済み - 1 1 1981
外部発表Yes

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wafers
damage
sinks
stress distribution
nuclei

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Mechanical damage gettering effect in Si. / Sawada, Renshi; Karaki, Toshiroh; Watanabe, Junji.

:: Japanese Journal of Applied Physics, 巻 20, 番号 11, 01.01.1981, p. 2097-2104.

研究成果: ジャーナルへの寄稿記事

Sawada, R, Karaki, T & Watanabe, J 1981, 'Mechanical damage gettering effect in Si', Japanese Journal of Applied Physics, 巻. 20, 番号 11, pp. 2097-2104. https://doi.org/10.1143/JJAP.20.2097
Sawada, Renshi ; Karaki, Toshiroh ; Watanabe, Junji. / Mechanical damage gettering effect in Si. :: Japanese Journal of Applied Physics. 1981 ; 巻 20, 番号 11. pp. 2097-2104.
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