Mechanical damage gettering effect in Si

Renshi Sawada, Toshiroh Karaki, Junji Watanabe

    研究成果: ジャーナルへの寄稿学術誌査読

    11 被引用数 (Scopus)

    抄録

    The gettering effectiveness of microdefects in Si wafer with mechanical damage introduced deliberately is investigated in relation to the degree of damage and the stress field around the damage. It is found that gettering action continues for 8 hours or more, although slower, when the damage is applied to a deep part of the wafer. This is due to the fact that the dislocations introduced deep in the wafer continue to serve as sinks for microdefect nuclei. The gettering effect is also greatly dependent on the microdefect density of a wafer.

    本文言語英語
    ページ(範囲)2097-2104
    ページ数8
    ジャーナルJapanese Journal of Applied Physics
    20
    11
    DOI
    出版ステータス出版済み - 11月 1981

    !!!All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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