TY - JOUR
T1 - Mechanism of improved thermal stability of B in poly-SiGe gate on SiON
AU - Sadoh, Taizoh
AU - Fitrianto,
AU - Kenjo, Atsushi
AU - Miyauchi, Akihiro
AU - Inoue, Hironori
AU - Miyao, Masanobu
PY - 2002/4/1
Y1 - 2002/4/1
N2 - Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.
AB - Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.
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U2 - 10.1143/JJAP.41.2468
DO - 10.1143/JJAP.41.2468
M3 - Article
AN - SCOPUS:3142599687
VL - 41
SP - 2468
EP - 2471
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -