Mechanism of improved thermal stability of B in poly-SiGe gate on SiON

Taizoh Sadoh, Fitrianto, Atsushi Kenjo, Akihiro Miyauchi, Hironori Inoue, Masanobu Miyao

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)


Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.

ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
4 B
出版ステータス出版済み - 4月 1 2002

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)


「Mechanism of improved thermal stability of B in poly-SiGe gate on SiON」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。