Memory effects in ferroelectric/perovskite-semiconductor hetero-structures

Yukio Watanabe, M. Tanamura, Y. Matsumoto

研究成果: Contribution to journalArticle査読

抄録

Epitaxial ferroelectric heterostructures are proposed which use parent phases of the cuprate high-Tc superconductors and the related perovskite semiconductors. Properties of prototype field effect transistors (FET) and diodes employing this structures are presented. The FETs markedly improved the memory retention time over the conventional ferroelectric FETs. It retained one-half of the initial modulation after 10 months. Additionally, they exhibited switching time of 10-100 μs at 7V despite their large feature sizes (100 μm). A new memory effect was found in ferroelectric diodes consisted of several combinations of ferroelectric and perovskite semiconductors. Their conductivity in the forward bias was reproducibly switched between high and low values by positive and negative biases.

本文言語英語
ページ(範囲)141-148
ページ数8
ジャーナルIntegrated Ferroelectrics
13
1-3
DOI
出版ステータス出版済み - 1 1 1996
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

フィンガープリント 「Memory effects in ferroelectric/perovskite-semiconductor hetero-structures」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル