Memristive switching phenomena in a single oxide nanowire

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Electrically driven resistive switching (RS) in metal/oxide/metal junctions, so-called ReRAM and/or Memristor, has attracted much attention due to the potential applications toward next-generation nonvolatile memory devices. However the lack of nanoscale RS mechanism has been held back the range of practical applications. Here we demonstrate the nonvolatile RS in a single oxide nanowire (CoO x, NiO x, TiO 2) with 10 nm scale and the experimentally revealed nanoscale RS mechanism. The approach using oxide nanowire offers a platform not only to investigate the intrinsic characteristics of RS but also to tailor the RS properties for next-generation memory devices.

本文言語英語
ホスト出版物のタイトル2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
ページ28-31
ページ数4
DOI
出版ステータス出版済み - 12 1 2011
外部発表はい
イベント2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, 大韓民国
継続期間: 10 18 201110 21 2011

出版物シリーズ

名前2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

その他

その他2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Country大韓民国
CityJeju
Period10/18/1110/21/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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