MESFET’s on a GaAs-on-Insulator Structure

Kazuo Tsutsui, Tadao Nakazawa, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

11 引用 (Scopus)

抄録

MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.

元の言語英語
ページ(範囲)277-279
ページ数3
ジャーナルIEEE Electron Device Letters
EDL-8
発行部数6
DOI
出版物ステータス出版済み - 6 1987

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Wet etching
Field effect transistors
Molecular beam epitaxy
Crystalline materials
Fluorides
Substrates
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Tsutsui, K., Nakazawa, T., Asano, T., Ishiwara, H., & Furukawa, S. (1987). MESFET’s on a GaAs-on-Insulator Structure. IEEE Electron Device Letters, EDL-8(6), 277-279. https://doi.org/10.1109/EDL.1987.26629

MESFET’s on a GaAs-on-Insulator Structure. / Tsutsui, Kazuo; Nakazawa, Tadao; Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

:: IEEE Electron Device Letters, 巻 EDL-8, 番号 6, 06.1987, p. 277-279.

研究成果: ジャーナルへの寄稿記事

Tsutsui, K, Nakazawa, T, Asano, T, Ishiwara, H & Furukawa, S 1987, 'MESFET’s on a GaAs-on-Insulator Structure', IEEE Electron Device Letters, 巻. EDL-8, 番号 6, pp. 277-279. https://doi.org/10.1109/EDL.1987.26629
Tsutsui K, Nakazawa T, Asano T, Ishiwara H, Furukawa S. MESFET’s on a GaAs-on-Insulator Structure. IEEE Electron Device Letters. 1987 6;EDL-8(6):277-279. https://doi.org/10.1109/EDL.1987.26629
Tsutsui, Kazuo ; Nakazawa, Tadao ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / MESFET’s on a GaAs-on-Insulator Structure. :: IEEE Electron Device Letters. 1987 ; 巻 EDL-8, 番号 6. pp. 277-279.
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