Metal-Assisted chemical etching using silica nanoparticle for the fabrication of a silicon nanowire array

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

研究成果: ジャーナルへの寄稿記事

22 引用 (Scopus)

抄録

30-nm-diameter silica nanoparticles with a carboxyl radical (COO -) were successfully dispersed on an amino-treated silicon wafer at about 20 nm intervals owing to the repulsion among nanoparticles with negative charges. The dispersed silica nanoparticles were used as the mask for the preparation of silicon nanowire (SiNW) arrays by metal-assisted chemical etching (MAE). The diameter of the prepared SiNWs was approximately 30nm from their transmission electron microscope image.

元の言語英語
記事番号02BP09
ジャーナルJapanese Journal of Applied Physics
51
発行部数2 PART 2
DOI
出版物ステータス出版済み - 2 1 2012
外部発表Yes

Fingerprint

Nanowires
Etching
nanowires
Silica
etching
Nanoparticles
silicon dioxide
Fabrication
Silicon
nanoparticles
fabrication
silicon
Metals
metals
Silicon wafers
Masks
Electron microscopes
masks
electron microscopes
wafers

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Metal-Assisted chemical etching using silica nanoparticle for the fabrication of a silicon nanowire array. / Kato, Shinya; Watanabe, Yuya; Kurokawa, Yasuyoshi; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

:: Japanese Journal of Applied Physics, 巻 51, 番号 2 PART 2, 02BP09, 01.02.2012.

研究成果: ジャーナルへの寄稿記事

Kato, Shinya ; Watanabe, Yuya ; Kurokawa, Yasuyoshi ; Yamada, Akira ; Ohta, Yoshimi ; Niwa, Yusuke ; Hirota, masaki. / Metal-Assisted chemical etching using silica nanoparticle for the fabrication of a silicon nanowire array. :: Japanese Journal of Applied Physics. 2012 ; 巻 51, 番号 2 PART 2.
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