Metal-induced low-temperature crystallization of amorphous SiGe on insulating films

M. Miyao, H. Kanno, I. Tsunoda, T. Sadoh, A. Kenjo

研究成果: Contribution to journalConference article査読

抄録

Metal-induced low temperature (≤ 550°C) crystallization of a-Si1-xGex (0 ≤ x ≤ 1) layers on SiO2 films has been investigated. For low Ge fractions below 20%, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40-60%. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained at the optimized growth conditions (x: 0.4, annealing: 450°C, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.

本文言語英語
ページ(範囲)55-59
ページ数5
ジャーナルMaterials Research Society Symposium - Proceedings
744
DOI
出版ステータス出版済み - 1 1 2002
イベントQuantum Confined Semiconductor Nanostructures - Boston MA, 米国
継続期間: 12 2 200212 5 2002

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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