Metal-induced low temperature (≤ 550°C) crystallization of a-Si1-xGex (0 ≤ x ≤ 1) layers on SiO2 films has been investigated. For low Ge fractions below 20%, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40-60%. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained at the optimized growth conditions (x: 0.4, annealing: 450°C, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||出版済み - 1 1 2002|
|イベント||Quantum Confined Semiconductor Nanostructures - Boston MA, 米国|
継続期間: 12 2 2002 → 12 5 2002
All Science Journal Classification (ASJC) codes