Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering

K. Tajima, W. Shin, M. Nishibori, T. Itoh, N. Izu, I. Matsubara

研究成果: ジャーナルへの寄稿Conference article

抄録

Micro-thermoelectric hydrogen sensor working with the combination of the thermoelectric effect of phosphorus-doped SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation has been fabricated. Sensitivity of hydrogen gas of the device was improved by doping the SiGe thermoelectric thin film deposited by helicon sputtering. copyright The Electrochemical Society.

元の言語英語
ページ(範囲)23-27
ページ数5
ジャーナルECS Transactions
1
発行部数21
DOI
出版物ステータス出版済み - 12 1 2006
外部発表Yes
イベントSensors, Actuators, and Microsystems - 208th Electrochemical Society Meeting - Los Angeles, CA, 米国
継続期間: 10 16 200510 21 2005

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Helicons
Chemical sensors
Sputtering
hydrogen
sensor
Thin films
Hydrogen
gas
Thermoelectricity
Exothermic reactions
Phosphorus
Doping (additives)
phosphorus
oxidation
Oxidation
Sensors
Gases

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering. / Tajima, K.; Shin, W.; Nishibori, M.; Itoh, T.; Izu, N.; Matsubara, I.

:: ECS Transactions, 巻 1, 番号 21, 01.12.2006, p. 23-27.

研究成果: ジャーナルへの寄稿Conference article

Tajima, K. ; Shin, W. ; Nishibori, M. ; Itoh, T. ; Izu, N. ; Matsubara, I. / Micro-thermoelectric gas sensor with B- and P-doped SiGe thin film deposited by helicon sputtering. :: ECS Transactions. 2006 ; 巻 1, 番号 21. pp. 23-27.
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AU - Itoh, T.

AU - Izu, N.

AU - Matsubara, I.

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