Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition

Dong Wang, Hiroshi Nakashima, Jun Morioka, Tokuhide Kitamura

研究成果: ジャーナルへの寄稿学術誌査読

12 被引用数 (Scopus)

抄録

Microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes, which were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure chemical vapor deposition. Strain-induced band gap narrowing was directly observed by identifying the PL peak of the free exciton band-band transition in membranes, from which the strain ratio was estimated for each sample. Strain was reasonably dependent on the sample parameters, which implies that this measurement gives valid results.

本文言語英語
論文番号241918
ジャーナルApplied Physics Letters
91
24
DOI
出版ステータス出版済み - 2007

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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