Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition

Hongye Gao, Ken Ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, Hiroshi Nakashima

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.

本文言語英語
ページ(範囲)6633-6637
ページ数5
ジャーナルMaterials Science and Engineering A
527
24-25
DOI
出版ステータス出版済み - 9 2010

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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