Microstructure of AlN grown on a nucleation layer on a sapphire substrate

Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu, Takaaki Kuwahara, Masatoshi Mitsuhara, Noriyuki Kuwano

研究成果: Contribution to journalArticle査読

34 被引用数 (Scopus)

抄録

The growth conditions and interface microstructure of AlN on sapphire grown using a nucleation layer (NL) have been studied. The AlN layer with NL-AlN grown at 1100 °C exhibits a smooth surface morphology. The epilayer has a small amount of tilting but the twisting is large. For the AlN layer with NL-AlN grown at 1250 °C, the twisting is reduced, but the surface is rough owing to the mixing of crystallographic polarity. The origins of AlN inversion domains are discussed by considering the microstructures observed by transmission electron microscopy (TEM), with the ultimate aim of growing a high-quality AlN layer.

本文言語英語
論文番号025501
ジャーナルApplied Physics Express
5
2
DOI
出版ステータス出版済み - 2 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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