MnGeP2 thin films grown by molecular beam epitaxy

T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Y. Kangawa, A. Koukitu, K. Sato

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Growth conditions for MnGeP2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2, was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGex and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10-8 Torr.

本文言語英語
ページ(範囲)79-82
ページ数4
ジャーナルJournal of Superconductivity and Novel Magnetism
18
1
DOI
出版ステータス出版済み - 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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