MnGeP 2 thin films grown by molecular beam epitaxy

T. Ishibashi, K. Minami, J. Jogo, T. Nagatsuka, H. Yuasa, V. Smirnov, Yoshihiro Kangawa, A. Koukitu, K. Sato

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)


Growth conditions for MnGeP 2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P 2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP 2 , was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP 2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1 × 10 -8 Torr.

ジャーナルJournal of Superconductivity and Novel Magnetism
出版物ステータス出版済み - 12 1 2005


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Ishibashi, T., Minami, K., Jogo, J., Nagatsuka, T., Yuasa, H., Smirnov, V., ... Sato, K. (2005). MnGeP 2 thin films grown by molecular beam epitaxy Journal of Superconductivity and Novel Magnetism, 18(1), 79-82.