Modeling and simulation of Si IGBTs

N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. OhashiH. Iwai

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Technology CAD (TCAD) has been recognized as a powerful design tool for Si insulated gate bipolar transistors (IGBTs). Here, physical models, such as a mobility model for carrier-carrier scattering, were investigated for a predictive TCAD. Simulated currentvoltage characteristics of the trench-gate IGBTs were compared with measurements. The difference between 3D- and 2D-TCAD simulations was observed in a high current region, which was explained by a bias-dependent current flow. A test element group (TEG) for separation of the emitter currents for holes and electrons was also determined as effective for calibration of lifetime model parameters.

本文言語英語
ホスト出版物のタイトル2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
出版社Institute of Electrical and Electronics Engineers Inc.
ページ129-132
ページ数4
ISBN(電子版)9784863487635
DOI
出版ステータス出版済み - 9 23 2020
イベント2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, 日本
継続期間: 9 3 202010 6 2020

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2020-September

会議

会議2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
国/地域日本
CityVirtual, Kobe
Period9/3/2010/6/20

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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