Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor

Shin Ichi Nishizawa, Kazutoshi Kojima, Satoshi Kuroda, Kazuo Arai, Michel Pons

研究成果: ジャーナルへの寄稿Conference article

14 引用 (Scopus)

抄録

To explain the difference between SiC-CVD on the Si-face and C-face, a heterogeneous model was improved, in which the etching, growth and doping features of SiC-CVD in a horizontal hot-wall reactor were numerically analyzed. The improved model was able to explain the etching and growth features accurately. There was no difference between the Si- and C-face. In addition, we propose the surface C/Si ratio as the universal parameter of the SiC-CVD process. Concerning doping features, the improved model showed that nitrogen and aluminum doping incorporation could be explained by the site competition model, while taking into account the amount of surface silicon and surface carbon, respectively.

元の言語英語
ページ(範囲)e515-e520
ジャーナルJournal of Crystal Growth
275
発行部数1-2
DOI
出版物ステータス出版済み - 2 15 2005

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Chemical vapor deposition
reactors
vapor deposition
Doping (additives)
Etching
etching
Silicon
Aluminum
Nitrogen
Carbon
aluminum
nitrogen
carbon
silicon

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor. / Nishizawa, Shin Ichi; Kojima, Kazutoshi; Kuroda, Satoshi; Arai, Kazuo; Pons, Michel.

:: Journal of Crystal Growth, 巻 275, 番号 1-2, 15.02.2005, p. e515-e520.

研究成果: ジャーナルへの寄稿Conference article

Nishizawa, Shin Ichi ; Kojima, Kazutoshi ; Kuroda, Satoshi ; Arai, Kazuo ; Pons, Michel. / Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor. :: Journal of Crystal Growth. 2005 ; 巻 275, 番号 1-2. pp. e515-e520.
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AU - Pons, Michel

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