Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth

Masahito Watanabe, Koichi Kakimoto, Minoru Eguchi, Taketoshi Hibiya

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

The modification of heat transfer in molten silicon during Czochralski (CZ) crystal growth is discussed by focusing on the transition of the flow mode from axisymmetric to nonaxisymmetric, in order to clarify the mechanism of crystal-melt interface shape deformation. Heat transfer in silicon melt is observed by measuring the difference in temperature near the crucible wall and at the crystal-melt interface with simultaneous observation of molten silicon flow. We confirm that the heat transfer coefficient of silicon melt is reduced when the flow mode is changed from axisymmetric to non-axisymmetric. The crystal-melt interface shape changed as a result of the modified heat transfer, which is due to the flow mode transition from axisymmetric to non-axisymmetric.

本文言語英語
ページ(範囲)6181-6186
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
10
DOI
出版ステータス出版済み - 1997

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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