Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

21 被引用数 (Scopus)

抄録

Amorphous layered structures of Ge/Si were used for investigating metal-induced lateral crystallization (MILC). Secondary-ion mass spectroscopy (SIMS) assisted in the evaluation of the concentration profiles of Si, Ge, and Ni atoms at room temperature. As compared with the conventional MILC using a-Si single layers, modified MILC velocity increased by three times. In a short time annealing, poly-Si films with large areas were obtained. The bond rearrangement in the a-Si layers that was induced by crystal nucleation in a-Ge layers was responsible for the enhancement obtained for the layered structures.

本文言語英語
ページ(範囲)899-901
ページ数3
ジャーナルApplied Physics Letters
85
6
DOI
出版ステータス出版済み - 8 9 2004

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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