Amorphous layered structures of Ge/Si were used for investigating metal-induced lateral crystallization (MILC). Secondary-ion mass spectroscopy (SIMS) assisted in the evaluation of the concentration profiles of Si, Ge, and Ni atoms at room temperature. As compared with the conventional MILC using a-Si single layers, modified MILC velocity increased by three times. In a short time annealing, poly-Si films with large areas were obtained. The bond rearrangement in the a-Si layers that was induced by crystal nucleation in a-Ge layers was responsible for the enhancement obtained for the layered structures.
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