Molecular aggregation structure of polyethylene thin films prepared on silicon substrates

Sono Sasaki, Hirohiko Yakabe, Keiji Tanaka, Toshihiko Nagamura, Osami Sakata, Masaki Takata, Atsushi Takahara, Tisato Kajiyama

研究成果: 会議への寄与タイプ論文

抄録

In this study, structural features of crystalline polymers at the solid surface were analyzed by synchrotron grazing-incidence X-ray diffraction (SR-GIXD) measurements. Thin films of high-density polyethylene (HDPE) were prepared on silicon substrates from a p-xylene solution by a dip-coating method. The dip-coated films and the dip-coated and melt-crystallized ones were annealed at temperatures (Ta) of 373K-393K under N 2 atmosphere. The in-plane GIXD measurement for the HDPE thin films was carried out at the BL13XU of SPring-8, Japan. Bragg diffraction from the near-surface and the bulk of the films was detected at incident angles smaller and larger than the critical angle, respectively. Comparison of the surface-sensitive GIXD data with the bulk one revealed that the dimensions of orthorhombic unit cell in the near-surface region were smaller than those in the bulk region. This might relate to thermal stress induced between the HDPE film and the silicon substrate in film preparation.

元の言語英語
ページ3303-3304
ページ数2
出版物ステータス出版済み - 12 1 2005
イベント54th SPSJ Symposium on Macromolecules - Yamagata, 日本
継続期間: 9 20 20059 22 2005

その他

その他54th SPSJ Symposium on Macromolecules
日本
Yamagata
期間9/20/059/22/05

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Polyethylenes
High density polyethylenes
Agglomeration
Thin films
Silicon
Substrates
Film preparation
Xylene
Synchrotrons
Thermal stress
Diffraction
Crystalline materials
X ray diffraction
Coatings
Polymers
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Sasaki, S., Yakabe, H., Tanaka, K., Nagamura, T., Sakata, O., Takata, M., ... Kajiyama, T. (2005). Molecular aggregation structure of polyethylene thin films prepared on silicon substrates. 3303-3304. 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本.

Molecular aggregation structure of polyethylene thin films prepared on silicon substrates. / Sasaki, Sono; Yakabe, Hirohiko; Tanaka, Keiji; Nagamura, Toshihiko; Sakata, Osami; Takata, Masaki; Takahara, Atsushi; Kajiyama, Tisato.

2005. 3303-3304 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本.

研究成果: 会議への寄与タイプ論文

Sasaki, S, Yakabe, H, Tanaka, K, Nagamura, T, Sakata, O, Takata, M, Takahara, A & Kajiyama, T 2005, 'Molecular aggregation structure of polyethylene thin films prepared on silicon substrates' 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本, 9/20/05 - 9/22/05, pp. 3303-3304.
Sasaki S, Yakabe H, Tanaka K, Nagamura T, Sakata O, Takata M その他. Molecular aggregation structure of polyethylene thin films prepared on silicon substrates. 2005. 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本.
Sasaki, Sono ; Yakabe, Hirohiko ; Tanaka, Keiji ; Nagamura, Toshihiko ; Sakata, Osami ; Takata, Masaki ; Takahara, Atsushi ; Kajiyama, Tisato. / Molecular aggregation structure of polyethylene thin films prepared on silicon substrates. 論文発表場所 54th SPSJ Symposium on Macromolecules, Yamagata, 日本.2 p.
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AU - Takata, Masaki

AU - Takahara, Atsushi

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N2 - In this study, structural features of crystalline polymers at the solid surface were analyzed by synchrotron grazing-incidence X-ray diffraction (SR-GIXD) measurements. Thin films of high-density polyethylene (HDPE) were prepared on silicon substrates from a p-xylene solution by a dip-coating method. The dip-coated films and the dip-coated and melt-crystallized ones were annealed at temperatures (Ta) of 373K-393K under N 2 atmosphere. The in-plane GIXD measurement for the HDPE thin films was carried out at the BL13XU of SPring-8, Japan. Bragg diffraction from the near-surface and the bulk of the films was detected at incident angles smaller and larger than the critical angle, respectively. Comparison of the surface-sensitive GIXD data with the bulk one revealed that the dimensions of orthorhombic unit cell in the near-surface region were smaller than those in the bulk region. This might relate to thermal stress induced between the HDPE film and the silicon substrate in film preparation.

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