Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth

Takahiro Kawamura, Yoshihiro Kangawa, Koichi Kakimoto, Yasuyuki Suzuki

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

In this study, we simulated the solution growth of gallium nitride (GaN) and investigated the diffusion behavior of nitrogen (N) atoms on growth surfaces by molecular dynamics simulation. The simulation showed that the Ga-face grew flatter than the N-face. Comparing the diffusion coefficients of a N atom on Ga- and N-faces, the values on the Ga-face were about 3.5 times larger than those on the N-face.

本文言語英語
ページ(範囲)32-36
ページ数5
ジャーナルJournal of Crystal Growth
351
1
DOI
出版ステータス出版済み - 7 15 2012

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

フィンガープリント 「Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル