Molecular Dynamics Simulations of Nucleation and Crystallization Processes During Excimer-Laser Annealing of Amorphous Silicon on Glass

T. Motooka, S. Munetoh, Lee Byoung Min, K. Nisihira

研究成果: ジャーナルへの寄稿Conference article

抄録

We have investigated atomistic processes of nucleation and crystallization in excimer-laser annealed thin Si films on glass based on molecular-dynamics (MD) simulations using the Tersoff potential. MD cells composed of up to approximately 50000 Si atoms were heated to produce melted Si, and then melted Si was quenched under various supercooled conditions with or without a temperature gradient and the corresponding nucleation processes were visualized. Lateral growth of thin Si crystalline films was also simulated by embedding a crystalline nano-particle with various crystal surfaces in melted Si. It has been found that the crystal surfaces become predominantly {111} during the lateral growth processes.

元の言語英語
ページ(範囲)59-64
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
780
出版物ステータス出版済み - 12 8 2003
イベントMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Advanced Optical Processing of Materials - San Francisco, CA, 米国
継続期間: 4 22 20034 23 2003

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Excimer lasers
annealing
Crystallization
Amorphous silicon
nucleation
silicon
Molecular dynamics
crystallization
Nucleation
laser
glass
Annealing
crystal
Crystalline materials
Glass
Crystals
Computer simulation
Thermal gradients
temperature gradient
simulation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Molecular Dynamics Simulations of Nucleation and Crystallization Processes During Excimer-Laser Annealing of Amorphous Silicon on Glass. / Motooka, T.; Munetoh, S.; Min, Lee Byoung; Nisihira, K.

:: Materials Research Society Symposium - Proceedings, 巻 780, 08.12.2003, p. 59-64.

研究成果: ジャーナルへの寄稿Conference article

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