Molecular-dynamics simulations of nucleation and crystallization processes of laser crystallized poly-Si

Byoung Min Lee, Teruaki Motooka, Shinji Munetoh

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

The nucleation and crystallization processes of excimer-laser annealed Si on a SiO2 substrate for complete melting conditions have been investigated by using molecular-dynamics simulations. In the early stage of nucleation, the preferential growth of nuclei with a {111} face normal to the surface was originated from the {111} twin boundaries with a low surface energy. The partial rotation of the dimer leads to the growth of {111}-oriented nuclei along twins that have different stacking sequences. The recombination of vacancies and dimers at the solidification front is directly related to {111} growth from the twin boundaries.

元の言語英語
記事番号055205
ジャーナルJournal of Physics Condensed Matter
20
発行部数5
DOI
出版物ステータス出版済み - 2 6 2008

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Crystallization
Polysilicon
Molecular dynamics
Nucleation
nucleation
crystallization
molecular dynamics
Dimers
Lasers
Computer simulation
dimers
lasers
nuclei
simulation
Excimer lasers
Interfacial energy
excimer lasers
solidification
surface energy
Vacancies

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

これを引用

Molecular-dynamics simulations of nucleation and crystallization processes of laser crystallized poly-Si. / Lee, Byoung Min; Motooka, Teruaki; Munetoh, Shinji.

:: Journal of Physics Condensed Matter, 巻 20, 番号 5, 055205, 06.02.2008.

研究成果: ジャーナルへの寄稿記事

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