Molecular-dynamics simulations of recrystallization processes in silicon: Nucleation and crystal growth in the solid-phase and melt

T. Motooka, S. Munetoh, R. Kishikawa, T. Kuranaga, T. Ogata, T. Mitani

    研究成果: ジャーナルへの寄稿会議記事査読

    抄録

    It is of increasing importance to understand crystallization processes of silicon (Si) in atomic scale for developing high-speed thin film transistors. We have performed molecular-dynamics (MD) simulations of nucleation, crystallization and defect formation processes in amorphous Si (a-Si) as well as in liquid Si (1-Si). Based on the MD simulation results combined with high-resolution electron microscopy measurements, it is proposed that the crystallization and defect formation processes are controlled by the interface nanostructures between disordered and crystalline Si. It is also suggested that nucleation and crystal growth in a-Si films deposited on glass during excimer laser annealing occur in amorphous-solid and low-density liquid phases rather than in supercooled 1-Si as has been generally accepted. copyright The Electrochemical Society.

    本文言語英語
    ページ(範囲)207-213
    ページ数7
    ジャーナルECS Transactions
    3
    8
    DOI
    出版ステータス出版済み - 2006
    イベントThin Film Transistor Technologies 8 - 210th Electrochemical Society Meeting - Cancun, メキシコ
    継続期間: 10月 29 200611月 3 2006

    !!!All Science Journal Classification (ASJC) codes

    • 工学(全般)

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