We have investigated defect formation processes during solid-phase epitaxy of Si in the  direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of  twins.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||出版済み - 11 15 2001|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics