Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes

Shinji Munetoh, Koji Moriguchi, Akira Shintani, Ken Nishihira, Teruaki Motooka

研究成果: Contribution to journalArticle査読

18 被引用数 (Scopus)

抄録

We have investigated defect formation processes during solid-phase epitaxy of Si in the [001] direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of [111] twins.

本文言語英語
論文番号193314
ページ(範囲)1933141-1933144
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
64
19
DOI
出版ステータス出版済み - 11 15 2001
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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