Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes

Shinji Munetoh, Koji Moriguchi, Akira Shintani, Ken Nishihira, Teruaki Motooka

研究成果: ジャーナルへの寄稿記事

17 引用 (Scopus)

抄録

We have investigated defect formation processes during solid-phase epitaxy of Si in the [001] direction based on molecular dynamics (MD) simulations using the Tersoff potential. Two different types of defect formation processes have been successfully observed in the MD simulations. They can be characterized by the structure of Si-Si dimer bonds created at the amorphous/crystalline interface in the initial stage of the defect formation. In the first type, the Si-Si dimer bonds form coupled dimer lines and these coupled dimer lines lead to the creation of 111 stacking faults. In the second type, the Si-Si dimer bonds form a single dimer line which leads to the creation of [111] twins.

元の言語英語
記事番号193314
ページ(範囲)1933141-1933144
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
64
発行部数19
出版物ステータス出版済み - 11 15 2001
外部発表Yes

Fingerprint

Epitaxial growth
Dimers
epitaxy
Molecular dynamics
solid phases
dimers
molecular dynamics
Defects
defects
Computer simulation
simulation
Stacking faults
crystal defects
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Munetoh, S., Moriguchi, K., Shintani, A., Nishihira, K., & Motooka, T. (2001). Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes. Physical Review B - Condensed Matter and Materials Physics, 64(19), 1933141-1933144. [193314].

Molecular dynamics simulations of solid-phase epitaxy of Si : Defect formation processes. / Munetoh, Shinji; Moriguchi, Koji; Shintani, Akira; Nishihira, Ken; Motooka, Teruaki.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 64, 番号 19, 193314, 15.11.2001, p. 1933141-1933144.

研究成果: ジャーナルへの寄稿記事

Munetoh, S, Moriguchi, K, Shintani, A, Nishihira, K & Motooka, T 2001, 'Molecular dynamics simulations of solid-phase epitaxy of Si: Defect formation processes', Physical Review B - Condensed Matter and Materials Physics, 巻. 64, 番号 19, 193314, pp. 1933141-1933144.
Munetoh, Shinji ; Moriguchi, Koji ; Shintani, Akira ; Nishihira, Ken ; Motooka, Teruaki. / Molecular dynamics simulations of solid-phase epitaxy of Si : Defect formation processes. :: Physical Review B - Condensed Matter and Materials Physics. 2001 ; 巻 64, 番号 19. pp. 1933141-1933144.
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