Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt

Manabu Ishimaru, Shinji Munetoh, Teruaki Motooka, Koji Moriguchi, Akira Shintani

研究成果: ジャーナルへの寄稿記事

28 引用 (Scopus)

抄録

We have performed molecular-dynamics calculations to examine defect-formation processes in silicon grown from the melt based on the ordinary Langevin equation employing the Tersoff interatomic potential. Our simulations indicated that hexagonal structures are formed near the solid-liquid interfaces and these regions give rise to microfacets composed of primarily (111)\ planes. Most of these hexagonal configurations were annihilated during further crystal growth, but a part of them were left, which resulted in defect formation with five- and seven-member rings.

元の言語英語
ページ(範囲)12583-12586
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
58
発行部数19
DOI
出版物ステータス出版済み - 1 1 1998

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Silicon
Crystallization
Crystal growth
Molecular dynamics
crystal growth
molecular dynamics
Defects
defects
silicon
liquid-solid interfaces
rings
Liquids
configurations
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

これを引用

Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt. / Ishimaru, Manabu; Munetoh, Shinji; Motooka, Teruaki; Moriguchi, Koji; Shintani, Akira.

:: Physical Review B - Condensed Matter and Materials Physics, 巻 58, 番号 19, 01.01.1998, p. 12583-12586.

研究成果: ジャーナルへの寄稿記事

Ishimaru, Manabu ; Munetoh, Shinji ; Motooka, Teruaki ; Moriguchi, Koji ; Shintani, Akira. / Molecular-dynamics studies on defect-formation processes during crystal growth of silicon from melt. :: Physical Review B - Condensed Matter and Materials Physics. 1998 ; 巻 58, 番号 19. pp. 12583-12586.
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