Monitoring of two-dimensional plasma uniformity with electrostatic probing of oxidized wafer surface

Mitsuo Yasaka, Tomoyuki Kitamura, Masayoshi Takeshita, Tanemasa Asano

研究成果: Contribution to journalArticle

抜粋

A new method of monitoring the two-dimensional uniformity of plasma for semiconductor processing is proposed. This method measures electric potential distribution of the surface of an oxidized Si wafer exposed to plasma using an electrostatic probe array. The O2 and H2 plasmas generated using a reactive ion etching equipment are tested. It is shown that the measured electric potential distribution agrees well with the distribution of plasma parameters measured using a Langmuir probe. A good correlation between the measured plasma nonuniformity and the degradation of gate SiO2 of metal-oxide-silicon (MOS) structure is demonstrated.

元の言語英語
ページ(範囲)L327-L329
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
40
発行部数4 A
DOI
出版物ステータス出版済み - 4 1 2001
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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