TY - JOUR
T1 - MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast
AU - Tawara, T.
AU - Suemune, I.
AU - Tanaka, S.
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2000
Y1 - 2000
N2 - ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93% at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.
AB - ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93% at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.
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U2 - 10.1016/S0022-0248(00)00259-1
DO - 10.1016/S0022-0248(00)00259-1
M3 - Conference article
AN - SCOPUS:0033686920
SN - 0022-0248
VL - 214
SP - 1019
EP - 1023
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - The 9th International Conference on II-VI Compounds
Y2 - 1 November 1999 through 5 November 1999
ER -