MOVPE growth of ZnSe/ZnMgS distributed Bragg reflectors with high refractive-index contrast

T. Tawara, I. Suemune, S. Tanaka

研究成果: Contribution to journalConference article査読

10 被引用数 (Scopus)

抄録

ZnSe/ZnMgS distributed Bragg reflectors (DBRs) with a high refractive-index contrast were grown on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The difference of the refractive indices between ZnSe and Zn0.27Mg0.73S was estimated to be about 0.52 at 510 nm, which is very large compared with previous II-VI DBRs. The maximum reflectivity of the grown ZnSe/Zn0.27Mg0.73S DBRs (with only 5-periods) was measured to be 93% at 510 nm at room temperature. DBRs with a high refractive-index contrast can reduce the penetration depth of light into the DBR and have the potential to increase the strength of the exciton-photon coupling in a microcavity.

本文言語英語
ページ(範囲)1019-1023
ページ数5
ジャーナルJournal of Crystal Growth
214
DOI
出版ステータス出版済み - 2000
外部発表はい
イベントThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
継続期間: 11 1 199911 5 1999

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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