Multi-layer stacking scheme of sol-gel based SiO2 towards thicker (>0.8 µm) cladding layers for optical waveguides

Ahmad Syahrin Idris, Haisong Jiang, Kiichi Hamamoto

研究成果: ジャーナルへの寄稿学術誌査読

抄録

A multi-layer stacking scheme using a sol-gel SiO2 fabrication technique was developed towards stacking thick layers of >0.8 µm for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 µm sol-gel SiO2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 µm with high surface resistivity of >6.6 × 1013 Ω/m was obtained. Furthermore, a-Si/SiO2 waveguide (cladding thickness: 1.9 µm) was realized to confirm the fundamental potential as a cladding layer.

本文言語英語
論文番号20180783
ジャーナルIEICE Electronics Express
15
19
DOI
出版ステータス出版済み - 10月 10 2018

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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