Multi-layer stacking scheme of sol-gel based SiO 2 towards thicker (>0.8 µm) cladding layers for optical waveguides

Ahmad Syahrin Idris, Haisong Jiang, Kiichi Hamamoto

研究成果: ジャーナルへの寄稿レター

抄録

A multi-layer stacking scheme using a sol-gel SiO 2 fabrication technique was developed towards stacking thick layers of >0.8 µm for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 µm sol-gel SiO 2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 µm with high surface resistivity of >6.6 × 10 13 Ω/m was obtained. Furthermore, a-Si/SiO 2 waveguide (cladding thickness: 1.9 µm) was realized to confirm the fundamental potential as a cladding layer.

元の言語英語
記事番号20180783
ジャーナルIEICE Electronics Express
15
発行部数19
DOI
出版物ステータス出版済み - 10 10 2018

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Optical waveguides
optical waveguides
Sol-gels
gels
Peeling
Passivation
Waveguides
Fabrication
peeling
passivity
waveguides
fabrication
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

Multi-layer stacking scheme of sol-gel based SiO 2 towards thicker (>0.8 µm) cladding layers for optical waveguides . / Idris, Ahmad Syahrin; Jiang, Haisong; Hamamoto, Kiichi.

:: IEICE Electronics Express, 巻 15, 番号 19, 20180783, 10.10.2018.

研究成果: ジャーナルへの寄稿レター

@article{28690a966c75488092a38d7f8dd579df,
title = "Multi-layer stacking scheme of sol-gel based SiO 2 towards thicker (>0.8 µm) cladding layers for optical waveguides",
abstract = "A multi-layer stacking scheme using a sol-gel SiO 2 fabrication technique was developed towards stacking thick layers of >0.8 µm for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 µm sol-gel SiO 2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 µm with high surface resistivity of >6.6 × 10 13 Ω/m was obtained. Furthermore, a-Si/SiO 2 waveguide (cladding thickness: 1.9 µm) was realized to confirm the fundamental potential as a cladding layer.",
author = "Idris, {Ahmad Syahrin} and Haisong Jiang and Kiichi Hamamoto",
year = "2018",
month = "10",
day = "10",
doi = "10.1587/elex.15.20180783",
language = "English",
volume = "15",
journal = "IEICE Electronics Express",
issn = "1349-2543",
publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",
number = "19",

}

TY - JOUR

T1 - Multi-layer stacking scheme of sol-gel based SiO 2 towards thicker (>0.8 µm) cladding layers for optical waveguides

AU - Idris, Ahmad Syahrin

AU - Jiang, Haisong

AU - Hamamoto, Kiichi

PY - 2018/10/10

Y1 - 2018/10/10

N2 - A multi-layer stacking scheme using a sol-gel SiO 2 fabrication technique was developed towards stacking thick layers of >0.8 µm for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 µm sol-gel SiO 2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 µm with high surface resistivity of >6.6 × 10 13 Ω/m was obtained. Furthermore, a-Si/SiO 2 waveguide (cladding thickness: 1.9 µm) was realized to confirm the fundamental potential as a cladding layer.

AB - A multi-layer stacking scheme using a sol-gel SiO 2 fabrication technique was developed towards stacking thick layers of >0.8 µm for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 µm sol-gel SiO 2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 µm with high surface resistivity of >6.6 × 10 13 Ω/m was obtained. Furthermore, a-Si/SiO 2 waveguide (cladding thickness: 1.9 µm) was realized to confirm the fundamental potential as a cladding layer.

UR - http://www.scopus.com/inward/record.url?scp=85060958750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060958750&partnerID=8YFLogxK

U2 - 10.1587/elex.15.20180783

DO - 10.1587/elex.15.20180783

M3 - Letter

VL - 15

JO - IEICE Electronics Express

JF - IEICE Electronics Express

SN - 1349-2543

IS - 19

M1 - 20180783

ER -