Multi-scale defects in ZnO thermoelectric ceramic materials co-doped with In and Ga

Anh Tuan Thanh Pham, Tuyen Anh Luu, Ngoc Kim Pham, Hanh Kieu Thi Ta, Truong Huu Nguyen, Dung Van Hoang, Hoa Thi Lai, Vinh Cao Tran, Jong Ho Park, Jae Ki Lee, Sungkyun Park, Ohtaki Michitaka, Su Dong Park, Hung Quang Nguyen, Thang Bach Phan

研究成果: ジャーナルへの寄稿学術誌査読

19 被引用数 (Scopus)

抄録

In this work, several X-ray and nuclear analysis techniques were used to examine ZnO materials co-doped with In and Ga, or IGZO materials. X-ray diffraction analysis, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy revealed multi-scale defects in the materials. A nanoscale secondary Ga2Zn9O12 spinel phase, mesoscale grain boundaries, and atomic-scale lattice defects were detected. The lattice defects included oxygen vacancies, zinc vacancies, and complex defects. Positron annihilation spectroscopy and Doppler broadening spectroscopy provided evidence of interactions between charge carriers and defects sites, which explained the low thermal conductivities of the IGZO materials (κtotal ≈ 3.9 W/mK) at 773 K. This combination of X-ray and nuclear analytical techniques can be viewed as a novel approach for investigating the thermoelectric properties of materials with complex crystal structures that contain atomic-scale voids, nanoscale secondary phases, and mesoscale grain boundaries.

本文言語英語
ページ(範囲)10748-10758
ページ数11
ジャーナルCeramics International
46
8
DOI
出版ステータス出版済み - 6月 1 2020

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • セラミックおよび複合材料
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 材料化学

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