N- and p-type doping of 4H-SiC by wet-chemical laser processing

K. Nishi, Akihiro Ikeda, D. Marui, Hiroshi Ikenoue, Tanemasa Asano

研究成果: 著書/レポートタイプへの貢献会議での発言

5 引用 (Scopus)

抜粋

We developed a method to dope phosphorus and aluminum into 4H-SiC by irradiating excimer laser light to 4H-SiC immersed in phosphoric acid solution or aluminum chloride solution. Phosphorus and aluminum are introduced at a concentration over 1020 /cm3 near the crystal surface. We produced a pn junction, and the pn junction shows a rectifying characteristic whose ideality factor is nearly unity.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2013
出版者Trans Tech Publications Ltd
ページ645-648
ページ数4
ISBN(印刷物)9783038350101
DOI
出版物ステータス出版済み - 1 1 2014
イベント15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, 日本
継続期間: 9 29 201310 4 2013

出版物シリーズ

名前Materials Science Forum
778-780
ISSN(印刷物)0255-5476

その他

その他15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
日本
Miyazaki
期間9/29/1310/4/13

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Nishi, K., Ikeda, A., Marui, D., Ikenoue, H., & Asano, T. (2014). N- and p-type doping of 4H-SiC by wet-chemical laser processing. : Silicon Carbide and Related Materials 2013 (pp. 645-648). (Materials Science Forum; 巻数 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.645