N- and p-type doping of 4H-SiC by wet-chemical laser processing

K. Nishi, A. Ikeda, D. Marui, H. Ikenoue, T. Asano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

5 被引用数 (Scopus)

抄録

We developed a method to dope phosphorus and aluminum into 4H-SiC by irradiating excimer laser light to 4H-SiC immersed in phosphoric acid solution or aluminum chloride solution. Phosphorus and aluminum are introduced at a concentration over 1020 /cm3 near the crystal surface. We produced a pn junction, and the pn junction shows a rectifying characteristic whose ideality factor is nearly unity.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2013
編集者Hajime Okumura, Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Yasuhisa Sano, Tsuyoshi Funaki
出版社Trans Tech Publications Ltd
ページ645-648
ページ数4
ISBN(印刷版)9783038350101
DOI
出版ステータス出版済み - 2014
イベント15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, 日本
継続期間: 9 29 201310 4 2013

出版物シリーズ

名前Materials Science Forum
778-780
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

その他

その他15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
Country日本
CityMiyazaki
Period9/29/1310/4/13

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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