n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7×10 8cmHz/W which was improved to 1.5×1010cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.
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