N-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes prepared at room temperature

Mahmoud Shaban; Kenji Kawai; Nathaporn Promros; Tsuyoshi Yoshitake

doi:10.1109/LED.2010.2078793

N-type nanocrystalline-FeSi₂/p-type si heterojunction photodiodes prepared at room temperature

Mahmoud Shaban, Kenji Kawai, Nathaporn Promros, Tsuyoshi Yoshitake

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

15 被引用数 (Scopus)

抄録

n-Type nanocrystalline-FeSi₂/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm² and a detectivity of 2.7×10 ⁸cmHz/W which was improved to 1.5×10¹⁰cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.

本文言語	英語
論文番号	5610704
ページ（範囲）	1428-1430
ページ数	3
ジャーナル	IEEE Electron Device Letters
巻	31
号	12
DOI	https://doi.org/10.1109/LED.2010.2078793
出版ステータス	出版済み - 12月 2010

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/LED.2010.2078793

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引用スタイル

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