N-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes prepared at room temperature

Mahmoud Shaban, Kenji Kawai, Nathaporn Promros, Tsuyoshi Yoshitake

    研究成果: ジャーナルへの寄稿学術誌査読

    15 被引用数 (Scopus)

    抄録

    n-Type nanocrystalline-FeSi2/p-type Si heterojunctions were prepared at room temperature by means of a facing target direct-current sputtering method. The current densityvoltage (JV) characteristics of the devices fabricated were investigated in the temperature range of 77300 K. At a wavelength of 1.31 μm, the photodiodes exhibited a room-temperature responsivity of 110 mA/cm2 and a detectivity of 2.7×10 8cmHz/W which was improved to 1.5×1010cmHz/W at 77 K. The results profile an attractive low-cost near-infrared photodiode suitable for large-area optoelectronics.

    本文言語英語
    論文番号5610704
    ページ(範囲)1428-1430
    ページ数3
    ジャーナルIEEE Electron Device Letters
    31
    12
    DOI
    出版ステータス出版済み - 12月 2010

    !!!All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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