Nano-artifact metrics based on random collapse of resist

Tsutomu Matsumoto, Morihisa Hoga, Yasuyuki Ohyagi, Mikio Ishikawa, Makoto Naruse, Kenta Hanaki, Ryosuke Suzuki, Daiki Sekiguchi, Naoya Tate, Motoichi Ohtsu

研究成果: ジャーナルへの寄稿学術誌査読

20 被引用数 (Scopus)

抄録

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes, and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10â nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.

本文言語英語
論文番号6142
ジャーナルScientific reports
4
DOI
出版ステータス出版済み - 8月 21 2014
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 一般

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