Conventional electronic devices have been based on semiconductor transistor technology, in which electron charge is controlled by electrical means. Since the emergence of the integrated circuit concept for semiconductor devices, device performance has significantly advanced via large-scale integration with the miniaturization of transistors. However, these devices are not energy efficient because of their substantial Joule heat generation and volatile characteristics. In addition, owing to recent development of top-down nanofabrication technology, device dimensions are close to the intrinsic physical scalability limits within a few-nanometer range. To overcome these serious obstacles, innovative materials, device structures, and operational principles have been recently demonstrated. In this chapter, future prospects of next-generation nanoelectronics with low power consumption are discussed with consideration of the aforementioned proposals.
All Science Journal Classification (ASJC) codes
- 化学 (全般)