Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence

Yoshifumi Ikoma, Yuta Nishino, Shouhei Anan, Toshiaki Abe, Hirofumi Sakita

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

本文言語英語
ホスト出版物のタイトルAdvanced Materials Science and Technology
出版社Trans Tech Publications Ltd
ページ252-255
ページ数4
ISBN(印刷版)9783037856604
DOI
出版ステータス出版済み - 2013
イベント8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, 日本
継続期間: 8 1 20128 4 2012

出版物シリーズ

名前Materials Science Forum
750
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

その他

その他8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
Country日本
CityFukuoka City
Period8/1/128/4/12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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