Nanopore formation on SOI(100) by CH₃SiH₃ pulse jet CVD:SiC growth temperature dependence

We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH₃SiH₃ pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.