Nanoscale doping of InAs via sulfur monolayers

Johnny C. Ho, Alexandra C. Ford, Yu Lun Chueh, Paul W. Leu, Onur Ergen, Kuniharu Takei, Gregory Smith, Prashant Majhi, Joseph Bennett, Ali Javey

研究成果: Contribution to journalArticle査読

64 被引用数 (Scopus)

抄録

One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ∼3.5 nm /decade is observed without significant defect density. The n+/p + junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ∼8× 1018 cm-3.

本文言語英語
論文番号072108
ジャーナルApplied Physics Letters
95
7
DOI
出版ステータス出版済み - 2009
外部発表はい

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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