Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes

Masaharu Shiratani, Giichiro Uchida, Hyun Woong Seo, Daiki Ichida, Kazunori Koga, Naho Itagaki, Kunihiro Kamataki

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2 under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2 and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2 and open-circuit voltage of 0.15 V.

元の言語英語
ホスト出版物のタイトルTHERMEC 2013
出版者Trans Tech Publications Ltd
ページ2022-2027
ページ数6
783-786
ISBN(印刷物)9783038350736
出版物ステータス出版済み - 2014
イベント8th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC 2013 - Las Vegas, NV, 米国
継続期間: 12 2 201312 6 2013

出版物シリーズ

名前Materials Science Forum
783-786
ISSN(印刷物)02555476

その他

その他8th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC 2013
米国
Las Vegas, NV
期間12/2/1312/6/13

Fingerprint

Semiconductor quantum dots
Nanostructures
Solar cells
solar cells
quantum dots
Nanoparticles
Plasmas
nanoparticles
Open circuit voltage
short circuit currents
open circuit voltage
Short circuit currents
Magnetron sputtering
plasma jets
Power generation
Chemical vapor deposition
hollow
radio frequencies
magnetron sputtering
vapor deposition

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Shiratani, M., Uchida, G., Seo, H. W., Ichida, D., Koga, K., Itagaki, N., & Kamataki, K. (2014). Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes. : THERMEC 2013 (巻 783-786, pp. 2022-2027). (Materials Science Forum; 巻数 783-786). Trans Tech Publications Ltd.

Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes. / Shiratani, Masaharu; Uchida, Giichiro; Seo, Hyun Woong; Ichida, Daiki; Koga, Kazunori; Itagaki, Naho; Kamataki, Kunihiro.

THERMEC 2013. 巻 783-786 Trans Tech Publications Ltd, 2014. p. 2022-2027 (Materials Science Forum; 巻 783-786).

研究成果: 著書/レポートタイプへの貢献会議での発言

Shiratani, M, Uchida, G, Seo, HW, Ichida, D, Koga, K, Itagaki, N & Kamataki, K 2014, Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes. : THERMEC 2013. 巻. 783-786, Materials Science Forum, 巻. 783-786, Trans Tech Publications Ltd, pp. 2022-2027, 8th International Conference on Processing and Manufacturing of Advanced Materials, THERMEC 2013, Las Vegas, NV, 米国, 12/2/13.
Shiratani M, Uchida G, Seo HW, Ichida D, Koga K, Itagaki N その他. Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes. : THERMEC 2013. 巻 783-786. Trans Tech Publications Ltd. 2014. p. 2022-2027. (Materials Science Forum).
Shiratani, Masaharu ; Uchida, Giichiro ; Seo, Hyun Woong ; Ichida, Daiki ; Koga, Kazunori ; Itagaki, Naho ; Kamataki, Kunihiro. / Nanostructure control of Si and Ge quantum dots based solar cells using plasma processes. THERMEC 2013. 巻 783-786 Trans Tech Publications Ltd, 2014. pp. 2022-2027 (Materials Science Forum).
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AU - Koga, Kazunori

AU - Itagaki, Naho

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AB - We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2 under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2 and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2 and open-circuit voltage of 0.15 V.

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