Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN

Koichi Okamoto; Axel Scherer; Yoichi Kawakami

doi:10.1063/1.2105999

Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN

Koichi Okamoto, Axel Scherer, Yoichi Kawakami

研究成果: Contribution to journal › Article › 査読

36 被引用数 (Scopus)

抄録

Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaNGaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance.

本文言語	英語
論文番号	161104
ページ（範囲）	1-3
ページ数	3
ジャーナル	Applied Physics Letters
巻	87
号	16
DOI	https://doi.org/10.1063/1.2105999
出版ステータス	出版済み - 10 17 2005
外部発表	はい

All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

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10.1063/1.2105999

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title = "Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN",

abstract = "Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaNGaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance.",

author = "Koichi Okamoto and Axel Scherer and Yoichi Kawakami",

note = "Funding Information: The authors would like to thank Professor Sg. Fujita and Professor M. Terazima (Kyoto University) for valuable suggestions and discussions. The authors also wish to thank G. Maltezos (Caltech) for helpful discussions and reviewing the manuscript. A part of this study was supported by AFOSR for their support under Contract No. FA9550-04-1-0413.",

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AU - Okamoto, Koichi

AU - Scherer, Axel

AU - Kawakami, Yoichi

N1 - Funding Information: The authors would like to thank Professor Sg. Fujita and Professor M. Terazima (Kyoto University) for valuable suggestions and discussions. The authors also wish to thank G. Maltezos (Caltech) for helpful discussions and reviewing the manuscript. A part of this study was supported by AFOSR for their support under Contract No. FA9550-04-1-0413.

PY - 2005/10/17

Y1 - 2005/10/17

N2 - Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaNGaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance.

AB - Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaNGaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance.

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Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaNGaN

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