Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial behavior of carrier dynamics in InGaNGaN quantum wells. The carrier and thermal dynamics were observed through the time profile of the TR-M-TL signal. Also, NSOM-photoluminescence and NSOM-TL images were observed at the same time. By comparing these two images, both radiative and nonradiative recombination centers in InGaN active layer were unambiguously discriminated with submicrometer scale. Such nonradiative carrier dynamics has been difficult to observe by conventional techniques in spite of its importance.
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