n-Type β-FeSi2/intrinsic Si/p-type Si heterojunction photodiodes were prepared by facing-targets direct-current sputtering, and their near-infrared light detection performances were evaluated in the temperature range of 50 - 300 K. The rectification current ratio at bias voltages of ±1 V and the ratio of the photocurrent to the dark leakage current were remarkably enhanced with a decrease in the temperature. The detectivity at zero bias was estimated to be 3.8- 109 cmHz1/2/W at 300 K, and it was enhanced to be 8.9-1011 cmHz1/2/W at 50 K. It was demonstrated that β-FeSi2 is a potential material applicable to near-infrared photodetectors that are compatible with Si.
|ホスト出版物のタイトル||Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012|
|出版ステータス||出版済み - 2012|
|イベント||Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, 米国|
継続期間: 10 7 2012 → 10 12 2012
|その他||Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012|
|Period||10/7/12 → 10/12/12|
All Science Journal Classification (ASJC) codes