Near-infrared light detection of n-type β-FeSi2/Intrinsic Si/p-Type Si Heterojunction Photodiodes at Low Temperatures

R. Iwasaki, K. Yamashita, N. Promros, S. Izumi, S. Funasaki, M. Shaban, T. Yoshitake

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    抄録

    n-Type β-FeSi2/intrinsic Si/p-type Si heterojunction photodiodes were prepared by facing-targets direct-current sputtering, and their near-infrared light detection performances were evaluated in the temperature range of 50 - 300 K. The rectification current ratio at bias voltages of ±1 V and the ratio of the photocurrent to the dark leakage current were remarkably enhanced with a decrease in the temperature. The detectivity at zero bias was estimated to be 3.8- 109 cmHz1/2/W at 300 K, and it was enhanced to be 8.9-1011 cmHz1/2/W at 50 K. It was demonstrated that β-FeSi2 is a potential material applicable to near-infrared photodetectors that are compatible with Si.

    本文言語英語
    ホスト出版物のタイトルLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
    ページ129-135
    ページ数7
    6
    DOI
    出版ステータス出版済み - 2012
    イベントSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, 米国
    継続期間: 10 7 201210 12 2012

    出版物シリーズ

    名前ECS Transactions
    番号6
    50
    ISSN(印刷版)1938-5862
    ISSN(電子版)1938-6737

    その他

    その他Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
    Country米国
    CityHonolulu, HI
    Period10/7/1210/12/12

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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